纳米双栅MOSFET栅极漏电流的二维量子模拟(英文)

基于非平衡格林函数(NEGF)的量子输运理论框架,对双栅MOSFET进行了二维实空间数值模拟。在对表征载流子电势的泊松方程自洽求解后,感兴趣的物理量(如亚阈值摆幅、漏致势垒下降、载流子密度、电流密度等)可以被求得,观察了由栅极注入效应导致的二维电荷分布,并对不同电介质材料对栅极漏电流的影响进行了研究。此外,还通过调整电介质参数并进行比较的方法,研究了电介质的有效质量、介电常数、导带偏移对栅极漏电流的影响。该模拟方法为双栅MOSFET中载流子自栅极的注入提供了良好的物理图景,对器件特性的分析和比较有助于栅氧层高k电介质材料的选取。     

A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs

On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator.Besides offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.     

非对称异质双栅应变硅MOSFETs 二维模型研究

基于对二维泊松方程的精确求解,本文对全耗尽型非对称异质双栅应变硅MOSFET的二维表面势,表面电场,阈值电压进行了研究。模型结果和二维数值模拟器的结果很吻合。此外并对该器件的物理作了深入的研究。该模型对设计全耗尽型非对称异质双栅应变硅MOSFET器件有着重要的指导作用.     

关于短沟道双栅无结型晶体管的仿真研究

We study the characteristics of short channel double-gate(DG) junctionless(JL) FETs by device simulation. OutputⅠ-Ⅴcharacteristic degradations such as an extremely reduced channel length induced subthreshold slope increase and the threshold voltage shift due to variations of body doping and channel length have been systematically analyzed.Distributions of electron concentration,electric field and potential in the body channel region are also analyzed.Comparisons with conventional inversion-mode(IM) FETs,which can demonstrate the advantages of JL FETs,have also been performed.     

级联MOSFET均压测试方法研究

文章分析了传统均压测试方法中,隔离高压探头寄生参数对级联MOSFET均压效果的影响。通过改变同一高边MOSFET的DS电压测试探头数量,分析了测试方法引入寄生参数的变化对瞬态均压的干扰程度。基于此提出了一种减法均压测试方法,并对所提出的减法均压测试方法的优化进行了分析与实验验证。实验结果表明该测试方式能精确评估级联MOSFET在稳态以及开通、关断瞬态的均压效果,且不受测试线缆寄生参数的影响。     

Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance

We propose a double-gate (DG) 1T-DRAM cell combining SONOS type storage node on the back-gate (control-gate) for nonvolatile memory function. The cell sensing margin and retention time characteristics were systematically examined in terms of control-gate voltage (V_cg) and nonvolatile memory (NVM) function. The additional NVM function is achieved by Fowler-Nordheim (FN) tunneling electron injection into the nitride storage node. The injected electrons induce a permanent hole accumulation layer in silicon body which improves the sensing margin and retention time characteristics. To demonstrate the effect of stored electrons in the nitride layer, experimental data are provided using 0.6 μm devices fabricated on SOI wafers.     

A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs

A new continuous semi-empiric compact model for the current transfer characteristics of surrounding gate undoped polycrystalline silicon (Poly-Si) nanowire (NW) MOSFETs is proposed. The model consists of a single equation based on the Lambert function, which contains only four parameters and is continuously valid and fully differentiable throughout weak and strong conduction regimes of operation. The model is tested on measured transfer characteristics of experimental devices. The extracted model parameters are used to generate transfer characteristics playbacks that are then compared to the measured data to validate the proposed model’s adequacy for these devices.     

Stacked field effect transistor integration in double channel transistors (DCT) with tri-state transfer slope and ballistic field effect behavior

Implants create isolated electric charge under the channel region of nFET and pFET. By this, a new local extrema in the transfer slope is obtained while maintaining low leakage in off state. The results are explained by electro-static field simulation and yield in a circuit model with two parallel channel resistors, indicating a double channel field effect transistor (DCT). The new DCTs allow complex functions in logic or small transistor bit cells in the future.     

对称三材料双栅应变硅MOSFET亚阈值电流与亚阈值斜率解析模型

基于泊松方程和边界条件,推导了对称三材料双栅应变硅金属氧化物半导体场效应晶体管（MOSFET：metal oxide semiconductor field effect transistor）的表面势解析解.利用扩散-漂移理论,在亚阈值区电流密度方程的基础上,提出了亚阈值电流与亚阈值斜率二维解析模型.分析了沟道长度、功函数差、弛豫SiGe层的Ge组份、栅介质层的介电常数、应变硅沟道层厚度、栅介质高k层厚度和沟道掺杂浓度等参数对亚阈值性能的影响,并对亚阈值性能改进进行了分析研究.研究结果为优化器件参数提供了有意义的指导.模型解析结果与DESSIS仿真结果吻合较好.